Structure of high asymmetric p-n-junction taking into account the charge of movable carriers

Authors

  • A.B. Galat
  • A.L. Donchenko

DOI:

https://doi.org/10.30837/rt.2018.1.192.17

Keywords:

p-n junction, asymmetric, movable carriers, structure, spatial charge

Abstract

A refined analytical model is proposed for calculating the structure of the spatial charge area of a semiconductor p-n junction with allowance for the spatial charge of movable carriers. The work was carried out in the context of refinement of the analytical estimation of p-n junction recombination current, and also in order to estimate the Schottky model applicability limits when calculating the recombination currents in the spatial charge area of a sharply asymmetric semiconductor p-n junction.

References

Шалимова К. В. Физика полупроводников. Москва : Энергия, 1978. 416 с.

Киреев П. С. Физика полупроводников. Москва : Высш. шк., 1975. 586 с.

Зи С. М. Физика полупроводниковых приборов. Кн. 1 ; пер. с англ. Москва : Мир, 1984. 456с.

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Published

2018-03-30

How to Cite

Galat, A., & Donchenko, A. (2018). Structure of high asymmetric p-n-junction taking into account the charge of movable carriers. Radiotekhnika, 1(192), 113–118. https://doi.org/10.30837/rt.2018.1.192.17

Issue

No. 192 (2018): Radiotekhnika

Section

Articles

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