HRYHA, V.; VINTONIAK, V.; HULA, V. MOSFET transistor modeling including parasitic leakage and drain resistance. Radiotekhnika, [S. l.], n. 222, p. 219–227, 2025. DOI: 10.30837/rt.2025.3.222.22. Disponível em: http://rt.nure.ua/article/view/343584. Acesso em: 5 dec. 2025.