GALAT, A.; DONCHENKO, A. Structure of high asymmetric p-n-junction taking into account the charge of movable carriers. Radiotekhnika, [S. l.], v. 1, n. 192, p. 113–118, 2018. DOI: 10.30837/rt.2018.1.192.17. Disponível em: http://rt.nure.ua/article/view/176533. Acesso em: 22 nov. 2024.